Spectroscopic ellipsometry study of GaAs1−xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy
Spectroscopic ellipsometry study of GaAs1−xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy
复制标题
DOI：
10.1063/1.3167359
复制
发表时间：
2009-07
影响因子：
4
通讯作者：
N. Sedrine;I. Moussa;H. Fitouri;A. Rebey;B. Jani;R. Chtourou
中科院分区：
文献类型：
--
作者：
N. Sedrine;I. Moussa;H. Fitouri;A. Rebey;B. Jani;R. Chtourou
用室温椭圆偏振光谱仪测定了常压金属有机气相外延生长的GaAs1−xBix(0%≤x≤3.7%)合金的复介电函数光学性质。用数值计算的介电函数二阶导数进行线形拟合，求出了1.4-5.4 eV能量范围内的带间跃迁能。然后确定了铋效应对临界点参数的影响。我们发现，对于GaAs1−xBix合金的E0跃迁，铋的掺入使E1、E1+Δ1、E2和E0‘跃迁能量发生了移动，但幅度较小。我们还观察到E1展宽参数(Γ1)相对于铋组分呈平方根状的增加。
The optical properties in terms of complex dielectric function of GaAs1−xBix alloys (0%≤x≤3.7%), grown by atmospheric pressure metal-organic vapor-phase epitaxy, are determined by using room temperature spectroscopic ellipsometry. The interband transition energies in the energy range of 1.4–5.4 eV are resolved using a line shape fitting on the numerically calculated dielectric function second derivatives. The bismuth effect on the critical point parameters is then determined. We have found that, as for GaAs1−xBix alloys E0 transition, the bismuth incorporation shifts the E1, E1+Δ1, E2, and E0′ transition energies but with a lower magnitude. We also observed a root-square-like increase of the E1 broadening parameter (Γ1) with respect to the bismuth composition.