Charge Writing at the LaAlO3/SrTiO3 surface.
Charge Writing at the LaAlO3/SrTiO3 surface.
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DOI：
10.1021/nl1012695
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发表时间：
2010-05
期刊：
影响因子：
10.8
通讯作者：
Yanwu Xie;C. Bell;T. Yajima;Y. Hikita;H. Hwang
中科院分区：
文献类型：
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作者：
Yanwu Xie;C. Bell;T. Yajima;Y. Hikita;H. Hwang
偏导尖端原子力显微镜（AFM）已经被证明可以在LaAlO(3)/SrTiO(3)界面上写入和擦除纳米级金属线。利用不同的AFM模式，我们发现电导率切换的机制是表面电荷的写入。这些电荷稳定地沉积在广泛的LaAlO(3)厚度上，包括大块晶体。在LaAlO的1和2个单元胞中发现了与书写极性的强烈不对称性(3)，为理论预测的内置电位提供了实验证据。
Biased conducting-tip atomic force microscopy (AFM) has been shown to write and erase nanoscale metallic lines at the LaAlO(3)/SrTiO(3) interface. Using various AFM modes, we show the mechanism of conductivity switching is the writing of surface charge. These charges are stably deposited on a wide range of LaAlO(3) thicknesses, including bulk crystals. A strong asymmetry with writing polarity was found for 1 and 2 unit cells of LaAlO(3), providing experimental evidence for a theoretically predicted built-in potential.