Single-photon property characterization of 1.3 mu m emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes
Single-photon property characterization of 1.3 mu m emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes
复制标题
使用硅雪崩光电二极管对 InAs/GaAs 量子点的 1.3 μm 发射进行单光子特性表征
作者：
Ni, H. Q.;Niu, Z. C.;Jiang, D. S.;Sun, B. Q.
