Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature
Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature
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DOI：
10.1063/1.2386915
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发表时间：
2006-11-13
影响因子：
4
通讯作者：
Nakata, Y.
中科院分区：
文献类型：
--
作者：
Xia, J. S.;Ikegami, Y.;Nakata, Y.
在绝缘体上硅衬底上制备了具有Ge自组装量子点的六角二维光子晶体微腔。在室温下，在1.2-1.6 μ m波长范围内观察到Ge量子点的强光致发光。尖锐的峰占主导地位的光谱，显示出强烈的光共振腔内。在1.58 μ m处观察到一个品质因数为560的共振峰，沿着出现，在显微光致发光光谱中发光显著增强。还观察到当PhC的结构参数改变时，峰合理地移动。(c)2006年，美国物理学会。
Freestanding hexagonal two-dimensional photonic crystal (PhC) microcavities with Ge self-assembled quantum dots were fabricated on silicon-on-insulator substrates. Strong photoluminescence associated with Ge quantum dots was observed in the wavelength region of 1.2-1.6 mu m at room temperature. Sharp peaks dominated the spectrum, showing strong optical resonance inside the cavity. A resonant peak with a quality factor of 560 was observed at 1.58 mu m along with a significant enhancement of the luminescence in the microphotoluminescence spectrum. The peaks were also observed to reasonably shift when the structural parameter of PhC was changed. (c) 2006 American Institute of Physics.