Characterization of density-of-states in indium zinc oxide thin-film transistor from temperature stress studies
Characterization of density-of-states in indium zinc oxide thin-film transistor from temperature stress studies
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DOI：
10.1016/j.mssp.2014.06.046
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发表时间：
2014-11
影响因子：
4.1
通讯作者：
Xingwei Ding;Jianhua Zhang;Weimin Shi;Hao Zhang;Chuanxin Huang;Jun Li;Xueyin Jiang;Zhilin Zhang
中科院分区：
文献类型：
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作者：
Xingwei Ding;Jianhua Zhang;Weimin Shi;Hao Zhang;Chuanxin Huang;Jun Li;Xueyin Jiang;Zhilin Zhang
本文研制了一种以高k氧化铝薄膜为栅极绝缘体的高性能底栅氧化铟锌薄膜晶体管(TFT)。通过原子层沉积 (ALD) 技术沉积的优质氧化铝薄膜显示出非常光滑的表面（RMS 粗糙度~0.46 nm）。该器件的场效应迁移率为 17.9 cm2/Vs，阈值电压为 -0.46 V，开/关比为 108，亚阈值摆幅为 0.13 V/Dec。研究了器件在温度应力下的不稳定性。观察到的随温度升高而出现的负 VTH 偏移可以通过热激活过程来解释，活性能量 EA 可以通过温度相关对数 (IDS) 和 1/kT 的拟合获得作为 VGS 的函数。根据实验获得的活化能 (EA) 相对于 VGS 的微分提取态密度 (DOS)。
High-performance bottom-gate indium zinc oxide thin-film transistor (TFT) with high-k aluminum oxide thin film as the gate insulator is developed in this paper. Good-quality aluminum oxide thin film deposited via an atomic layer deposition (ALD) technique shows a quite smooth surface (RMS roughness~0.46 nm). The device exhibits a field-effect mobility of 17.9 cm2/Vs, a threshold voltage of −0.46 V, an on/off ratio of 108, and a sub-threshold swing of 0.13 V/Dec. The instability of device under temperature stress has been investigated. The observed negativeVTHshift with increasing temperature can be explained by the thermal activation process, the active energyEAcan be obtained as a function ofVGSfrom fitting of the temperature dependent log(IDS) and 1/kT. The density-of-states (DOS) was extracted based on the experimentally obtained differential of activation energy (EA) with respect toVGS.