Residual charges and infrared absorption in electrochromic WO3 films prepared by hydrogen-introduced sputtering

Residual charges and infrared absorption in electrochromic WO3 films prepared by hydrogen-introduced sputtering
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引氢溅射制备电致变色WO3薄膜的残余电荷和红外吸收

DOI:
10.1016/s0927-0248(01)00028-9
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发表时间:
2001
影响因子:
6.9
通讯作者:
K. Urabe
K. Urabe
中科院分区:
材料科学2区
文献类型:
--
作者:
M. Kitao;Masaki Makifuchi;K. Urabe

文献摘要

被引文献

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在Ar/H2/O2混合气氛中,采用射频溅射法制备了WO 3电致变色薄膜。溅射膜需要多次离子注入/提取(老化)以获得可逆的着色/漂白。在老化之后,有离子(质子)残留在膜中,即残留电荷。从溅射态和老化态薄膜的红外吸收结果来看,残余电荷有助于形成OH和HOH键。在溅射过程中引入薄膜中的氢仅转化为与薄膜中不稳定氧结合的OH键。原子力显微镜观察表明,氢的引入抑制了WO 3薄膜中晶粒的生长。
Electrochromic WO3films were prepared by rf−sputtering in atmosphere consisting of Ar/H2/O2mixed gas. The as-sputtered films require several times of injection/extraction of ions (the aging) for obtaining reversible coloration/bleaching. After the aging, there are ions (protons) remaining in the films, namely residual charges. From the results of IR absorption of the as-sputtered and aged films, the residual charges contribute to create OH and HOH bonds. Hydrogen introduced in the films during sputtering is transformed only into OH bonds combining with unstable oxygen in the films. The introduced hydrogen is considered to suppress the growth of grain in WO3films from AFM observation.