Effects of doping profile and post-growth annealing on spin injection from Fe into (Al,Ga)As heterostructures
Effects of doping profile and post-growth annealing on spin injection from Fe into (Al,Ga)As heterostructures
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掺杂分布和生长后退火对 Fe 自旋注入 (Al,Ga)As 异质结构的影响
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
P. Crowell
中科院分区：
文献类型：
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作者：
C. Adelmann;J. Q. Xie;C. Palmstrøm;J. Strand;X. Lou;Jianping Wang;P. Crowell
研究了Fe∕Ga0.9Al0.1As界面对自旋发光二极管自旋注入的影响。发现自旋注入强烈依赖于界面掺杂分布，这证明了界面附近半导体中能带弯曲的重要性。还研究了生长后退火对从 Fe 接触到 GaAs 基自旋发光二极管的自旋注入的影响。研究发现，生长后退火温度高达 250°C 可以提高自旋注入效率。结果表明，退火改变了 Fe∕Ga0.9Al0.1As 界面的电子特性，肖特基势垒高度的增加证明了这一点。
The influence of the Fe∕Ga0.9Al0.1As interface on spin injection into a spin light-emitting diode is studied. Spin injection is found to depend strongly on the interfacial doping profile demonstrating the importance of band bending in the semiconductor near the interface. The effect of post-growth annealing on spin injection from Fe contacts into GaAs-based spin light-emitting diodes is also examined. Post-growth annealing up to 250 °C is found to increase the spin injection efficiency. It is demonstrated that the annealing modifies electronic properties of the Fe∕Ga0.9Al0.1As interface, as evidenced by an increase of the Schottky barrier height.