Epitaxial growth of InP nanowires on germanium
Epitaxial growth of InP nanowires on germanium
复制标题
DOI：
10.1038/nmat1235
复制
发表时间：
2004-11-01
期刊：
影响因子：
41.2
通讯作者：
Van der Sluis, P
中科院分区：
文献类型：
--
作者：
Bakkers, EPAM;Van Dam, JA;Van der Sluis, P
在硅上生长III-V族半导体将使其上级（光）电子特性1 -3与硅技术相结合。但是，诸如晶格和热膨胀失配以及反相畴的形成等基本问题阻碍了III-V族与IV族半导体的外延集成4 -6。在这里，我们展示了III-V族纳米线在IV族衬底上外延生长的原理。我们用汽-液-固方法在锗衬底上生长了InP纳米线。虽然晶格失配是大的（3.7%），生长的线是单晶和几乎没有位错。X射线衍射明确地证明了异质外延生长的纳米线。此外，我们表明，低电阻的电接触，可以获得之间的导线和基板。
The growth of III-V semiconductors on silicon would allow the integration of their superior (opto-)electronic properties1-3 with silicon technology. But fundamental issues such as lattice and thermal expansion mismatch and the formation of antiphase domains have prevented the epitaxial integration of III-V with group IV semiconductors4-6. Here we demonstrate the principle of epitaxial growth of III-V nanowires on a group IV substrate. We have grown InP nanowires on germanium substrates by a vapour-liquid-solid7 method. Although the crystal lattice mismatch is large (3.7%), the as-grown wires are monocrystalline and virtually free of dislocations. X-ray diffraction unambiguously demonstrates the heteroepitaxial growth of the nanowires. In addition, we show that a low-resistance electrical contact can be obtained between the wires and the substrate.