An investigation of surface contamination introduced during He+ implantation and subsequent effects on the thermal oxidation of Cu
An investigation of surface contamination introduced during He+ implantation and subsequent effects on the thermal oxidation of Cu
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DOI：
10.1016/j.apsusc.2021.152163
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发表时间：
2021-12
影响因子：
6.7
通讯作者：
Subing Yang;Y. Nakagawa;T. Shibayama
中科院分区：
文献类型：
--
作者：
Subing Yang;Y. Nakagawa;T. Shibayama
离子注入是提高铜抗氧化性的一种潜在手段。然而，由于真空系统内的泵油，在此过程中碳污染物也会被引入到金属表面上。这可能使离子注入对Cu氧化的影响的分析复杂化。本研究探讨了在He+注入过程中引入的表面污染。在Cu表面上确实发现了碳污染物，并且在200 ° C下对Cu氧化具有明显的钝化作用。这归因于C注入到Cu中几个纳米的深度与He+注入。通过形成由C、Cu和少量Cu2O组成的层来保护Cu免受氧化，该层阻挡Cu衬底与环境空气的接触。
Ion implantation is a potential means of increasing the oxidation resistance of Cu. However, carbonaceous contamination can also be introduced onto the metal surface during this process as a consequence of pump oil within the vacuum system. This can complicate analysis of the effect of ion implantation on Cu oxidation. The present study examined the surface contamination introduced during He+implantation. Carbonaceous contamination was indeed identified on the Cu surface and had an obvious passivation effect on Cu oxidation at 200 °C. This was ascribed to the implantation of C into the Cu to a depth of several nanometers in conjunction with He+implantation. The Cu was protected from oxidation by the formation of a layer consisting of C, Cu and a small amount of Cu2O that block the contact of Cu substrate and ambient air.