A p-Type Zinc-Based Metal-Organic Framework
A p-Type Zinc-Based Metal-Organic Framework
复制标题
DOI：
10.1021/acs.inorgchem.7b00198
复制
发表时间：
2017-06-05
影响因子：
4.6
通讯作者：
Jobic, Stephane
中科院分区：
文献类型：
--
作者：
Shang, Congcong;Gautier, Romain;Jobic, Stephane
半导体性质调节的原始概念通过合成p型氧化锌（ZnO）类金属有机框架（MOF）（ZnC 2 O3 H2）（n）来证明，其可以被视为天然n型半导体ZnO的可能替代物。当小的富氧有机连接体引入到Zn-O体系中时，氧空位和深价带最大值这两个在ZnO中产生p型行为的障碍分别被抑制和提高。对这种材料的掺杂和光致发光行为的进一步研究证实了它与金属氧化物（MO）的相似性。这一结果回答了在n型系统中产生p型行为的挑战。这一概念揭示了一类新的杂化材料，具有嵌入的连续金属氧网络，位于MO和MOF之间。它为不久的将来p型混合半导体的发展提供了具体的支持，更重要的是，丰富了无机半导体的调谐可能性。
An original concept for the property tuning of semiconductors is demonstrated by the synthesis of a p-type zinc oxide (ZnO)-like metal-organic framework (MOF), (ZnC2O3H2)(n), which can be regarded as a possible alternative for ZnO, a natural n-type semiconductor. When small oxygen-rich organic linkers are introduced to the Zn-O system, oxygen vacancies and a deep valence-band maximum, the two obstacles for generating p-type behavior in ZnO, are restrained and raised, respectively. Further studies of this material on the doping and photoluminescence behaviors confirm its resemblance to metal oxides (MOs). This result answers the challenges of generating p-type behavior in an n-type-like system. This concept reveals that a new category of hybrid materials, with an embedded continuous metal oxygen network, lies between the MOs and MOFs. It provides concrete support for the development of p-type hybrid semiconductors in the near future and, more importantly, the enrichment of tuning possibilities in inorganic semiconductors.