Stimulated Emission Depletion Microscopy with Diamond Silicon Vacancy Centers
Stimulated Emission Depletion Microscopy with Diamond Silicon Vacancy Centers
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DOI：
10.1021/acsphotonics.9b01135
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发表时间：
2019-07
期刊：
影响因子：
7
通讯作者：
Yaser Silani;Forrest Hubert;V. Acosta
中科院分区：
文献类型：
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作者：
Yaser Silani;Forrest Hubert;V. Acosta
受激发射损耗 (STED) 显微镜中的空间分辨率和荧光信号幅度受到可用荧光团的光稳定性的限制。在这里，我们表明，金刚石中带负电的硅空位 (SiV) 中心由于其光稳定性、近红外发射和良好的光物理性质，是 STED 显微镜有前途的荧光团。使用自制脉冲 STED 显微镜在室温下对块状金刚石中浅层植入的 SiV 中心进行成像。 765-800 nm 光的 SiV 受激发射截面为 (4.0 ± 0.3) × 10-17 cm2，大约比带负电的金刚石氮空位中心大 2-4 倍，接近常用的有机染料分子。我们对孤立的 SiV 中心进行 STED 显微镜观察，观察到横向半峰全宽光斑尺寸为 89 ± 2 nm，但受到可用 STED 激光脉冲能量较低 (0.4 nJ) 的限制。对于 5 nJ 的脉冲能量，分辨率预计...
The spatial resolution and fluorescence signal amplitude in stimulated emission depletion (STED) microscopy is limited by the photostability of available fluorophores. Here, we show that negatively charged silicon vacancy (SiV) centers in diamond are promising fluorophores for STED microscopy, owing to their photostable, near-infrared emission and favorable photophysical properties. A home-built pulsed STED microscope was used to image shallow implanted SiV centers in bulk diamond at room temperature. The SiV stimulated emission cross section for 765–800 nm light is found to be (4.0 ± 0.3) × 10–17 cm2, which is approximately 2–4 times larger than that of the negatively charged diamond nitrogen vacancy center and approaches that of commonly used organic dye molecules. We performed STED microscopy on isolated SiV centers and observed a lateral full-width-at-half-maximum spot size of 89 ± 2 nm, limited by the low available STED laser pulse energy (0.4 nJ). For a pulse energy of 5 nJ, the resolution is expect...