Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc-Tin-Oxide with Various Cation Compositions.
Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc-Tin-Oxide with Various Cation Compositions.
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DOI：
10.1021/acsami.7b06836
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发表时间：
2017-07
影响因子：
9.5
通讯作者：
S. Bitter;P. Schlupp;H. von Wenckstern;M. Grundmann
中科院分区：
文献类型：
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作者：
S. Bitter;P. Schlupp;H. von Wenckstern;M. Grundmann
我们提出了肖特基势垒二极管的电性能的室温沉积的非晶锌锡氧化物（ZTO）与Zn/（Zn + Sn）的含量在0.12和0.72之间。采用连续组分扩散脉冲激光沉积的组合方法，在50 × 50 mm 2玻璃基片上制备了4个样品，获得了宽范围的组分。肖特基势垒接触由反应直流溅射铂。当Zn/（Zn + Sn）为0.63时，二极管的整流比SV = 2.7 × 107，理想因子η = 1.05，有效势垒高度B，eff = 1.25 eV。观察到在几天和几个月的时间尺度上的老化，其导致改善的装置特性（更高的矫正和更低的理想因子）。特别是，在准备状态下性能最低的二极管表现出最大的改进。在0.63 Zn/（Zn + Sn）时，老化后的二极管性能最好（SV = 3.9 × 107，η = 1.12，Et B，eff = 1.31 eV）。
We present electrical properties of Schottky barrier diodes on room-temperature deposited amorphous zinc-tin-oxide (ZTO) with Zn/(Zn + Sn) contents between 0.12 and 0.72. A combinatorial approach with continuous composition spread pulsed laser deposition is used to achieve the wide range of compositions with four samples each on 50 × 50 mm2 glass substrates. The Schottky barrier contacts were fabricated by the reactive direct-current sputtering of platinum. Best diode properties (rectification ratio SV = 2.7 × 107, ideality factor η = 1.05, and effective barrier height ϕB,eff = 1.25 eV) are obtained for a composition of 0.63 Zn/(Zn + Sn). Aging on the timescale of days and months is observed that leads to improved device properties (higher rectifications and lower ideality factors). In particular, the diodes with the lowest performance in the as-prepared state show the biggest improvements. The best diode properties after the aging process (SV = 3.9 × 107, η = 1.12, and ϕB,eff = 1.31 eV) were also observed for 0.63 Zn/(Zn + Sn).