Tm3Fe5O12/Pt Heterostructures with Perpendicular Magnetic Anisotropy for Spintronic Applications
Tm3Fe5O12/Pt Heterostructures with Perpendicular Magnetic Anisotropy for Spintronic Applications
复制标题
DOI：
10.1002/aelm.201600376
复制
发表时间：
2017-01-01
影响因子：
6.2
通讯作者：
Ross, Caroline A.
中科院分区：
文献类型：
--
作者：
Quindeau, Andy;Avci, Can O.;Ross, Caroline A.
随着自旋电子学领域的发展，铁磁绝缘体（FMI）薄膜已成为自旋电子器件的重要组成部分。亚铁磁性钇铁石榴石特别是具有低吉尔伯特阻尼和远高于室温的居里温度的优良绝缘体，并且已经被结合到表现出大量自旋电子现象（包括自旋泵浦、自旋塞贝克和邻近效应）的异质结构中。然而，开发具有垂直磁各向异性（PMA）和PMA石榴石/重金属异质结构的高质量亚10 nm厚度的FMI石榴石膜以促进自旋电流和异常霍尔现象的发展一直是一个挑战。在这里，强大的PMA的高结构质量的低至5.6 nm的厚度的铁石榴石（TmIG）薄膜中被证明，保持接近散装的饱和磁化强度。结果表明，TmIG/Pt双层膜具有很大的自旋霍尔磁电阻（SMR）和由SMR驱动的反常霍尔效应，表明TmIG/Pt界面上存在有效的自旋传输.这些测量用于量化TmIG/Pt中的界面自旋混合电导和TmIG薄膜的温度依赖性PMA。
With recent developments in the field of spintronics, ferromagnetic insulator (FMI) thin films have emerged as an important component of spintronic devices. Ferrimagnetic yttrium iron garnet in particular is an excellent insulator with low Gilbert damping and a Curie temperature well above room temperature, and has been incorporated into heterostructures that exhibit a plethora of spintronic phenomena including spin pumping, spin Seebeck, and proximity effects. However, it has been a challenge to develop high quality sub-10 nm thickness FMI garnet films with perpendicular magnetic anisotropy (PMA) and PMA garnet/heavy metal heterostructures to facilitate advances in spin-current and anomalous Hall phenomena. Here, robust PMA in ultrathin thulium iron garnet (TmIG) films of high structural quality down to a thickness of 5.6 nm are demonstrated, which retain a saturation magnetization close to bulk. It is shown that TmIG/Pt bilayers exhibit a large spin Hall magnetoresistance (SMR) and SMR-driven anomalous Hall effect, which indicates efficient spin transmission across the TmIG/Pt interface. These measurements are used to quantify the interfacial spin mixing conductance in TmIG/Pt and the temperature-dependent PMA of the TmIG thin film.