Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride
Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride
复制标题
四氯化硅气-液-固生长合成硅纳米线的均匀 p 型掺杂
DOI：
10.1063/1.4993632
复制
发表时间：
2017
影响因子：
3.2
通讯作者：
J. Redwing
中科院分区：
文献类型：
--
作者：
C. Kendrick;M. Kuo;Jie Li;Haoting Shen;T. Mayer;J. Redwing
以四氯化硅（SiCl 4）为硅源，三甲基硼（TMB）为硼源，采用气-液-固生长机制制备了掺硼硅纳米线（SiNWs）。将直径达400 nm、长度> 7.5 μm的TMB掺杂硅纳米线集成到具有多个电极的全局背栅测试结构中进行电学表征。根据栅极调制测量，证实硅纳米线是重掺杂的p型。在7.5 μm的总长度上对生长的SiNW进行了多个四点电阻率测量。沿所生长的硼掺杂SiNW的整个长度，针对表面电荷校正的电阻率被确定为沿着0.01 +/-0.002 Ω cm。这也在蚀刻的SiNW的轴向方向上观察到，校正电阻率为0.01 +/-0.003 Ω cm，因此证实了使用TMB和SiCl 4作为前体的SiNW的均匀p型掺杂。
Boron-doped silicon nanowires (SiNWs) grown by the vapor-liquid-solid growth mechanism using silicon tetrachloride (SiCl4) as the silicon precursor and trimethylboron (TMB) as the boron source were studied to understand the axial and radial doping uniformity. TMB-doped SiNWs with diameters up to 400 nm and lengths > 7.5 μm were integrated into a global back-gated test structure with multiple electrodes for electrical characterization. From gate modulated measurements, the SiNWs were confirmed to be heavily doped p-type. Multiple four point resistivity measurements across a total length of 7.5 μm were taken on as-grown SiNWs. Resistivity, corrected for surface charge, was determined to be 0.01 +/− 0.002 Ω cm along the entire length of the as-grown boron doped SiNWs. This was also observed in the axial direction for etched SiNWs, with corrected resistivity of 0.01 +/− 0.003 Ω cm, therefore confirming the uniform p-type doping of SiNWs using TMB and SiCl4 as precursors.