A study of low noise JFETs exposed to large doses of gamma-rays and neutrons
A study of low noise JFETs exposed to large doses of gamma-rays and neutrons
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暴露于大剂量伽马射线和中子的低噪声 JFET 的研究
DOI：
10.1109/nssmic.1992.301428
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
V. Radeka
中科院分区：
文献类型：
--
作者：
M. Citterio;S. Rescia;V. Radeka
事实证明，单片工艺能够保留分立 JFET（结型场效应晶体管）高达 1 MGy (100 Mrad) /sup 60/Co 伽马射线的辐射硬度特性。对分立器件的中子辐照测试证实，Si JFET 显示出非常中等的损坏，最高可达 10/sup 13/ Ncm/sup -2/。在对比测试中，Si JFET 前置放大器已受到高达 600 kGy (60 Mrad) 的伽马射线照射和高达 4*10/sup 14/ Ncm/sup -2/ 的照射。该前置放大器能够经受住测试，并且在峰值时间长于大约=40 ns的区域中表现出比GaAs MESFET前置放大器更低的辐射敏感性。该结果与强子对撞机实验的前端电子设备的生存有关，这些设备在 10 年内可能会受到超过 30 Mrad 的电离辐射和 10/sup 14/ Ncm/sup -2/ 的影响。<<ETX>>
The monolithic process has proved able to retain the radiation hardness characteristics of discrete JFETs (junction field-effect transistors) up to 1 MGy (100 Mrad) of /sup 60/Co gamma rays. Neutron irradiation tests on discrete devices confirm that Si JFETs show very moderate damage up to 10/sup 13/ Ncm/sup -2/. In comparative tests Si JFET preamplifiers have been irradiated up to 600 kGy (60 Mrad) of gamma rays and up to 4*10/sup 14/ Ncm/sup -2/. The preamplifiers were able to withstand the tests and have shown less radiation sensitivity than GaAs MESFET preamplifiers in the region of peaking times longer than approximately=40 ns. The results are of interest in connection with the survival of front-end electronics for hadron collider experiments which may be subject to in excess of 30 Mrad of ionizing radiation and 10/sup 14/ Ncm/sup -2/ over a 10-year period.<<ETX>>