DESIGN AND OPERATION OF A HIGH PULSE RATE INTENSE ION BEAM DIODE
DESIGN AND OPERATION OF A HIGH PULSE RATE INTENSE ION BEAM DIODE
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DOI：
10.1063/1.1145521
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发表时间：
1995-06
影响因子：
1.6
通讯作者：
W. A. Noonan;S. Glidden;J. Greenly;D. Hammer
中科院分区：
文献类型：
--
作者：
W. A. Noonan;S. Glidden;J. Greenly;D. Hammer
强流离子束的几乎所有实际应用都要求以高重复频率产生束流脉冲。本文报道了第一个高脉冲速率、长寿命的离子束二极管的研制。它是一种磁绝缘二极管，已在四个脉冲脉冲中产生了∼75keV质子和碳束脉冲，脉冲宽度为1.0-2.5A/cm~2，持续时间为100 ns，最高可达90赫兹。它还产生了125keV、5A/cm2的Ar束流，稳定的脉冲功率为每30个S 1个脉冲，多次故障间隔超过1000个脉冲。该二极管采用磁约束阳极等离子体离子源，高重复频率脉冲功率系统基于可饱和磁开关。
Virtually all practical applications for intense ion beams require that the beam pulses be generated at high repetition rates. This paper reports the development of the first high pulse rate, long‐lived ion beam diode. It is a magnetically insulated diode which has produced ∼75 keV proton and carbon beam pulses of 1.0–2.5 A/cm2 and 100 ns duration at up to 90 Hz in four pulse bursts. It has also produced 125 keV, 5 A/cm2 Ar beams at a steady 1 pulse per 30 s for over 1000 pulses between failures in many runs. This diode employs a magnetically confined anode plasma ion source, and the high repetition rate pulsed power systems are based upon saturable magnetic switching.