Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN/GaN high electron mobility transistors
Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN/GaN high electron mobility transistors
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DOI：
10.1063/1.2825574
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发表时间：
2007-12-17
影响因子：
4
通讯作者：
Linthicum, K. J.
中科院分区：
文献类型：
--
作者：
Kang, B. S.;Wang, H. T.;Linthicum, K. J.
ZnO纳米棒栅AlGaN/GaN高电子迁移率晶体管（HEMT）被证明用于检测葡萄糖。采用低温水热分解法在栅区选择性生长ZnO纳米棒阵列，以固定葡萄糖氧化酶（GO（x））。一维ZnO纳米棒提供了大的有效表面积和高的表面积体积比，并为GO（x）的固定提供了有利的环境。当将pH值为7.4的缓冲液中的目标葡萄糖添加到固定在ZnO纳米棒表面上的GO（x）时，AlGaN/GaN HEMT漏源电流显示出小于5s的快速响应。我们可以检测到从0.5 nM到125 μ M的广泛浓度范围。该传感器的线性范围为0.5 nM至14.5 μ M，检测限为0.5 nM。这证明了将AlGaN/GaN HEMT用于糖尿病应用的基于呼出气冷凝物的葡萄糖检测的可能性。(c)2007年，美国物理学会。
ZnO nanorod-gated AlGaN/GaN high electron mobility transistors (HEMTs) are demonstrated for the detection of glucose. A ZnO nanorod array was selectively grown on the gate area using low temperature hydrothermal decomposition to immobilize glucose oxidase (GO(x)). The one-dimensional ZnO nanorods provide a large effective surface area with high surface-to-volume ratio and provide a favorable environment for the immobilization of GO(x). The AlGaN/GaN HEMT drain-source current showed a rapid response of less than 5 s when target glucose in a buffer with a pH value of 7.4 was added to the GO(x) immobilized on the ZnO nanorod surface. We could detect a wide range of concentrations from 0.5 nM to 125 mu M. The sensor exhibited a linear range from 0.5 nM to 14.5 mu M and an experiment limit of detection of 0.5 nM. This demonstrates the possibility of using AlGaN/GaN HEMTs for noninvasive exhaled breath condensate based glucose detection of diabetic application. (c) 2007 American Institute of Physics.