Solution growth of chalcopyrite compounds single crystal
Solution growth of chalcopyrite compounds single crystal
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DOI：
10.1016/j.renene.2014.10.015
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发表时间：
2015-07-01
期刊：
影响因子：
8.7
通讯作者：
Yoshino, Kenji
中科院分区：
文献类型：
--
作者：
Nagaoka, Akira;Nose, Yoshitaro;Yoshino, Kenji
采用移动加热器法（THM）成功地生长了Ⅰ-Ⅲ Ⅵ 2型黄铜矿化合物Cu（In-x，Ga 1-x）Se-2（CIGS）单晶。C1 GS的粉末X射线衍射（XRD）图谱显示出（112）、（220）和（312）面的优选取向，证实了黄铜矿结构。在拉曼光谱中，观察到CIGS预期的A1模式峰，并且没有观察到第二相。（112）取向的CIGS单晶的X射线摇摆曲线（XRC）的半高宽（FWHM）为103弧秒。CIGS单晶的组成是均匀的，并且CIGS的化学计量比被发现是稍微贫Cu、富In、富Ga和贫Se。利用这些结果可以获得质量较好的单相CIGS单晶。(C)2014爱思唯尔有限公司版权所有。
I-III VI2 chalcopyrite compound Cu(In-x, Ga1-x)Se-2 (CIGS) single crystal were successfully grown by traveling heater method (THM). The powder X-ray diffraction (XRD) pattern of the C1GS showed preferred orientations of (112), (220) and (312) planes, confirming the chalcopyrite structure. In Raman spectra, the A1 mode peaks expected for CIGS were observed, and no secondary phases were observed. The full-width at half-maximum (FWHM) of the X-ray rocking curve (XRC) for the (112) oriented CIGS single crystal is 103 arcsec. The composition of the CIGS single crystal was homogeneous and the stoichiometric ratio of CIGS was found to be slightly Cu-poor, In-rich, Ga-rich and Se-poor. The good-quality single-phase CIGS single crystals can be obtained from these results. (C) 2014 Elsevier Ltd. All rights reserved.