Surface Modification and Microstructuring of 4H-SiC(0001) by Anodic Oxidation with Sodium Chloride Aqueous Solution
Surface Modification and Microstructuring of 4H-SiC(0001) by Anodic Oxidation with Sodium Chloride Aqueous Solution
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DOI：
10.1021/acsami.8b19557
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发表时间：
2019-01-16
影响因子：
9.5
通讯作者：
Yamamura, Kazuya
中科院分区：
文献类型：
--
作者：
Yang, Xu;Sun, Rongyan;Yamamura, Kazuya
阳极氧化由于其高的氧化速率而成为一种很有前途的SiC晶片表面改性技术。由于SiC的材料特性，也可以通过阳极氧化和蚀刻来制备多孔SiC。在这项研究中，4 H-SiC（0001）表面的阳极氧化进行了研究，通过重复的阳极氧化和氢氟酸蚀刻在4 H-SiC（0001）表面，在此期间，多孔SiC的形成进行了观察和研究。阳极氧化对于去除由机械抛光形成的表面损伤是非常有效的，并且去除表面损伤后的表面可以被均匀地氧化，并且具有比通过化学机械抛光（CMP）新抛光的表面更高的氧化速率。我们提出了一个模型的基础上的电化学阻抗方法来解释作为CMP完成的表面和氧化/蚀刻表面之间的氧化的差异。由于SiC晶体的各向异性，在本研究中获得了多孔SiC。多孔SiC的结构是显着依赖于在阳极氧化开始时产生的蚀坑，并可以通过阳极氧化参数控制。由于SiC表面的各向异性氧化和SiC纤维阳极氧化的困难，阳极氧化和氢氟酸腐蚀不能去除多孔SiC。研究表明，阳极氧化是一种很有前途的SiC表面改性和多孔SiC的制备技术。
Anodic oxidation is a promising surface modification technique for the manufacture of SiC wafers owing to its high oxidation rate. It is also possible to fabricate porous SiC by anodic oxidation and etching owing to the material properties of SiC. In this study, the anodic oxidation of a 4H-SiC(0001) surface was investigated by performing repeated anodic oxidation and hydrofluoric acid etching on a 4H-SiC(0001) surface, during which the formation of porous SiC was observed and studied. Anodic oxidation is very effective for removing the surface damage formed by mechanical polishing, and the surface after removing the surface damage can be oxidized uniformly and has a higher oxidation rate than a surface newly finished by chemical mechanical polishing (CMP). We proposed a model based on the electrochemical impedance method to explain the difference in the oxidation between an as-CMP-finished surface and an oxidized/etched surface. Porous SiC was obtained in this study, which was due to the anisotropy of the SiC crystal. The structure of the porous SiC was significantly dependent on the etch pits generated at the beginning of anodic oxidation and can be controlled via anodic oxidation parameters. Anodic oxidation and hydrofluoric acid etching cannot remove porous SiC owing to the anisotropic oxidation of the SiC surface and the difficulty of anodizing SiC fibers. This study shows that anodic oxidation is a promising technique for the modification of SiC surfaces and the fabrication of porous SiC.