Detection of Defects in Diamond by Etch‐Pit Formation
Detection of Defects in Diamond by Etch‐Pit Formation
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通过蚀坑形成检测金刚石中的缺陷
DOI：
10.1002/pssa.201900247
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
Teraji Tokuyuki
中科院分区：
文献类型：
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作者：
Shimaoka Takehiro;Ichikawa Kimiyoshi;Koizumi Satoshi;Watanabe Kenji;Teraji Tokuyuki
研究了金刚石垂直肖特基势垒二极管(SBD)的反向电流密度JR与腐蚀坑形状的关系。腐蚀坑分布于整个外延层区域，密度为6.8 × 10 4-3.0 × 10 5 cm−2。蚀坑多为孤立型，呈平底或点底形状。典型的凹坑大小为3-5 μm宽，1-3 μm深。有些蚀坑呈线性聚集，尺寸为>；10 μm。当这些蚀坑簇出现时，SBD显示出较大的JR。腐蚀坑团簇密度为<；103 cm−2。
Correlation between the reverse current densityJRof diamond vertical Schottky barrier diodes (SBD) and the shape of the etch pits is investigated. Etch pits form throughout the whole epitaxial layer area with a density of 6.8 × 104–3.0 × 105cm−2. Most etch pits are isolated‐type, with flat‐bottom or point‐bottom shape. A typical pit size is 3–5 μm in width and 1–3 μm in depth. Some etch pits aggregate linearly with a size of >10 μm. The SBDs show largeJRwhen these etch pit clusters appear. The etch pit cluster density is <103cm−2.