Borazine Promoted Growth of Highly Oriented Thin Films
Borazine Promoted Growth of Highly Oriented Thin Films
复制标题
环硼嗪促进高取向薄膜的生长
DOI：
10.1021/acs.nanolett.3c00514
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发表时间：
2023
期刊：
影响因子：
10.8
通讯作者：
Kodambaka, Suneel Kumar
中科院分区：
文献类型：
--
作者：
Tanaka, Koichi;Arias, Pedro;Hojo, Koki;Watanabe, Tomoyasu;Liao, Michael E.;Aleman, Angel;Zaid, Hicham;Goorsky, Mark S.;Kodambaka, Suneel Kumar
我们报告了一种现象，即在单晶Al2O3（0001）衬底上暴露于硼氮烷（一种通常用于合成六方氮化硼层的前体）的薄膜比在相同条件下在裸Al2O3（0001）上生长的薄膜更高度取向。我们在Al_2O_3（0001）衬底上生长的面心立方Pd、体心立方Mo和三角形Ta_2C薄膜中观察到了这种现象。有趣的是，间歇暴露于环硼氮烷在Ta2C上的Ta2C薄膜的生长过程中产生更好的结晶度比直接沉积的单片Ta2C。我们将这些相当不寻常的结果归因于两个增强的吸附原子迁移率的组合，和外延注册表，在沉积过程中暴露于环硼氮烷的表面。我们期望我们的方法可以潜在地帮助改善沉积在各种衬底上的薄膜的结晶质量。
We report on a phenomenon, where thin films sputter-deposited on single-crystalline Al2O3(0001) substrates exposed to borazine─a precursor commonly used for the synthesis of hexagonal boron nitride layers─are more highly oriented than those grown on bare Al2O3(0001) under the same conditions. We observed this phenomenon in face-centered cubic Pd, body-centered cubic Mo, and trigonal Ta2C thin films grown on Al2O3(0001). Interestingly, intermittent exposure to borazine during the growth of Ta2C thin films on Ta2C yields better crystallinity than direct deposition of monolithic Ta2C. We attribute these rather unusual results to a combination of both enhanced adatom mobilities on, and epitaxial registry with, surfaces exposed to borazine during the deposition. We expect that our approach can potentially help improve the crystalline quality of thin films deposited on a variety of substrates.