Enhanced quality of Al2O3/SiC gate stack via microwave plasma annealing
Enhanced quality of Al2O3/SiC gate stack via microwave plasma annealing
复制标题
DOI：
10.1007/s12598-024-02781-y
复制
发表时间：
2024-06
期刊：
影响因子：
8.8
通讯作者：
Nannan You;Xinyu Liu;Qian Zhang;Zhen Wang;Jiayi Wang;Yang Xu;Xiu-Yan Li;Yuzheng Guo;Shengkai Wang
中科院分区：
文献类型：
--
作者：
Nannan You;Xinyu Liu;Qian Zhang;Zhen Wang;Jiayi Wang;Yang Xu;Xiu-Yan Li;Yuzheng Guo;Shengkai Wang
碳化硅（SiC）表面高质量的栅介质是制备高性能SiC金属氧化物半导体场效应晶体管（MOSFET）的关键。本研究利用微波电浆退火技术来获得高品质的Al 2 O3/SiC闸极堆叠。通过设计MPA气氛和优化等离子体功率，采用Al 2 O3介质膜的SiC MOS电容器表现出了较好的性能。界面态密度降低1个数量级，达到6 × 1011 cm −2·eV−1，击穿电场增大，电压漂移得到有效抑制。此外，从热效应和反应物种类的角度对MPA过程的机理进行了探讨。X射线光电子能谱（XPS）结果揭示了氧等离子体的主要作用。在MPA过程中的最佳等离子体功率的结果在第一邻居的Al-O键的缺陷修复和从界面区域的Al-O-H键的部分去除。本研究表明，MPA工艺是在SiC上实现高质量介电和界面的有效选择。
The high-quality gate dielectric on silicon carbide (SiC) surface is critical to fabricate high-performance SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). This research employs microwave plasma annealing (MPA) to obtain high-quality Al2O3/SiC gate stacks. By designing MPA atmosphere and optimizing the plasma power, the SiC MOS capacitor with a Al2O3dielectric film shows the enhanced performance. The interface state density is reduced by 1 order of magnitude to 6 × 1011cm−2·eV−1, the breakdown electric field is increased, and the voltage shift is effectively suppressed. Besides, the mechanism of MPA process is discussed in terms of the thermal effect and reactant species. X-ray photoelectron spectroscopy (XPS) results unveil oxygen plasma plays the main role. Optimal plasma power during the MPA process results in defect repairs of the first-neighbor Al–O bonding and partial removal of Al–O–H bond from the interface region. This study demonstrates that MPA process is an effective option to realize high-quality dielectric and interface on SiC.Graphical abstract