Ballistic hot electron effects in nanosilicon dots and their photonic applications (Invited)
Ballistic hot electron effects in nanosilicon dots and their photonic applications (Invited)
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纳米硅点的弹道热电子效应及其光子应用（特邀）
DOI：
10.1149/06105.0047ecst
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
and N. Mori
中科院分区：
文献类型：
--
作者：
N. Koshida;N. Ikegami;A. Kojima;R. Mentek;R. Suda;M. Yagi;J. Shirakashi;B. Gelloz;and N. Mori
纳米晶硅（nc-Si）点作为一种受限宽隙材料，其物理性质不仅与光子学有关，而且与电子学有关。实验和理论均支持，离散能级的电子结构显著提高了冲击电离速率，从而在光激发或注入初期发生内部电子雪崩。另一方面，nc-Si二极管充当平面冷阴极，发射弹道热电子。除了在真空中使用外，该装置还可在溶液中运行。研制了一种用于大规模平行电子束直写光刻的真空有源矩阵nc-Si电子发射阵列。溶液中的另一种应用方案是提供Si、Ge和SiGe的替代薄膜沉积，其中nc-Si发射极提供高还原电子。讨论了这些研究的最新进展。
The physical property of nanocrystalline silicon (nc-Si) dots as a confined wide-gap material relates not only to photonics, but also to electronics. As supported experimentally and theoretically, the electronic structure with discrete levels significantly enhances the impact ionization rate, and then internal electron avalanche occurs at the early stage of photo-excitation or injection. The nc-Si diode, on the other hand, acts as a planar cold cathode which emits ballistic hot electrons. In addition to the use in vacuum, the device is available for the operation in solutions. In vacuum active-matrix nc-Si electron emitter array has been developed for massively parallel electron beam direct-write lithography. Another application scheme in solutions provides alternative thin films deposition of Si, Ge, and SiGe, in which the nc-Si emitter supplies highly reducing electrons. Recent advancements of these studies are discussed.