Amorphization and solid‐phase epitaxial growth in tin‐ion‐implanted gallium arsenide
Amorphization and solid‐phase epitaxial growth in tin‐ion‐implanted gallium arsenide
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锡离子注入砷化镓的非晶化和固相外延生长
DOI：
10.1063/1.344959
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发表时间：
1990
影响因子：
3.2
通讯作者：
K. Sassa
中科院分区：
文献类型：
--
作者：
M. Taniwaki;H. Koide;N. Yoshimoto;T. Yoshiie;S. Ohnuki;M. Maeda;K. Sassa
用透射电子显微镜研究了锡离子注入砷化镓的非晶化和再结晶过程。在注入剂量为1014离子/厘米2的样品中发生非晶化。非晶区和结晶基体之间的界面是不平坦的。非晶区在673 K发生外延再结晶，形成微孪晶。以1016离子/cm 2的剂量注入的样品中的非晶-结晶界面是平坦的。在673 K退火后，在该样品的深部区域观察到固相外延生长，没有微孪晶形成。这些结构的变化进行了比较与核能量损失（损伤能）分布模拟的修剪代码。结果表明，注入剂量为1014 ions/cm ~ 2的样品的非晶化是由损伤能量的积累引起的，而注入剂量为1016 ions/cm ~ 2的样品的非晶化不能仅用损伤能量的积累来解释。贡献者…
The amorphization and recrystallization of tin‐ion‐implanted gallium arsenide were studied by cross‐sectional transmission electron microscopy. Amorphization occurred in the sample implanted at a dose of 1014 ions/cm2. The interface between the amorphous region and the crystalline matrix is not flat. The amorphous region recrystallizes epitaxially with microtwin formation at 673 K. The amorphous‐crystalline interface in the sample implanted at a dose of 1016 ions/cm2 is flat. In the deep region of this sample a solid‐phase epitaxial growth without microtwin formation is observed after annealing at 673 K. These structural changes were compared with the nuclear energy loss (damage energy) distribution simulated by the trim code. It is concluded that the amorphization of the sample implanted at a dose of 1014 ions/cm2 is induced by the accumulation of damage energy; on the other hand, the amorphization of the sample implanted at a dose of 1016 ions/cm2 cannot be explained only by this process. The contributi...