Mesh-shape-and-size controlled rapid-melting growth for the formation of single-crystalline (100), (110), and (111) Ge networks on insulators
Mesh-shape-and-size controlled rapid-melting growth for the formation of single-crystalline (100), (110), and (111) Ge networks on insulators
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DOI：
10.1063/1.3586259
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发表时间：
2011-05
影响因子：
4
通讯作者：
I. Mizushima;K. Toko;Yasuharu Ohta;Takashi Sakane;T. Sadoh;M. Miyao
中科院分区：
文献类型：
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作者：
I. Mizushima;K. Toko;Yasuharu Ohta;Takashi Sakane;T. Sadoh;M. Miyao
在硅衬底上形成的具有不同晶体取向的单晶Ge(c-Ge)网络是将高速多功能器件集成到硅平台上所必需的。C-Ge网络是通过优化网格的形状和尺寸，在(110)和(111)以及(100)Si衬底上大面积(500×250μm2)快速熔化生长的网状非晶Ge实现的。结果表明，通过选择网目形状和尺寸可以控制生长前沿产生的潜热，从而抑制自发形核。此外，还阐明了生长方向对防止旋转生长的重要作用。
Single-crystalline-Ge (c-Ge) networks with various crystal orientations on insulators formed on Si substrates are essential for integrating high-speed and multifunctional devices onto the Si platform. c-Ge networks are realized by rapid-melting growth of mesh-patterned amorphous-Ge over large areas (500×250 μm2) on (110) and (111) as well as (100) Si substrates by optimizing the shape and the size of the mesh. It is revealed that latent-heat generated at the growth front can be controlled by selecting mesh-shape-and-size, which suppresses the spontaneous nucleation. In addition, essential role of the growth-direction on preventing the rotational growth is clarified.