MOS-Controlled thyristors—A new class of power devices
MOS-Controlled thyristors—A new class of power devices
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DOI：
10.1109/t-ed.1986.22714
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发表时间：
1986-10
影响因子：
3.1
通讯作者：
V. Temple
中科院分区：
文献类型：
--
作者：
V. Temple
描述了一种基于 MOS 和晶闸管元件优化组合的新型功率器件。此类器件在导通状态和关断状态下工作的方式与晶闸管没有什么区别，但可以通过向其 MOS 栅极施加电压来实现从开到关或从关到开的切换。因此，这些器件表现出极低的正向压降、高浪涌电流能力，并享有负热反馈。为了关闭该器件，需要激活栅极，使 FET 导通，从而有效地短路晶闸管的发射结之一。这些 FET 在关断时只需要阻断大约 1V 的最大电压，而在接通时则承载大约 1μs 的相当大的电流。要打开设备，可以采用任何常规方法。然而，最方便的是使用相同的 MOS 栅极（和多晶硅层）和相反极性的电压来导通具有另一个 FET 的晶闸管 - 就像普通的 MOS 门控晶闸管一样。可关断的电流密度取决于关断 FET 的密度和有效电阻，而导通速度和 di/dt 额定值取决于初始导通面积，而初始导通面积又取决于 ON-FET 的密度。如果在所需的关断状态期间保持关断栅极电压，则该器件实际上具有无限的 dv/dt 能力。开关速度与门极可关断晶闸管 (GTO) 最相似，但稍快一些，并且与其他双极器件一样，主要取决于载流子复合时间、器件厚度和关断 di/dt。
A new class of power devices is described that is based on an optimal combination of MOS and thyristor elements. Devices of this class function in the ON-state and OFF-state in a manner indistinguishable from a thyristor yet can switch from on-to-off or off-to-on by applying a voltage to its MOS gate. Thus, the devices exhibit extremely low forward drop, high surge current capability, and enjoy negative thermal feedback. To turn off the device, one activates the gate so that FET's are turned on to effectively short one of the emitting junctions of the thyristor. These FET's need only block a maximum of about 1 V when off and carry a sizable current for about 1 µs when on. To turn on the device, any of the normal methods may be employed. However, it is most convenient to use the same MOS gate electrode (and polysilicon layer) and a voltage of the opposite polarity to turn on the thyristor with another FET-just as if it were a normal MOS gated thyristor. The current density that can be turned off depends on the density and effective resistance of the turn-off FET's while turn-on speed and di/ dt rating depend on the initial turn-on area, which in turn depends on the density of the ON-FET's. If the OFF-gate voltage is maintained during the desired OFF-state period, the device has, effectively, an infinite dv/dt capability. Switching speed is most similar to, but somewhat faster than, that of gate turn-off thyristors (GTO's) and, as in other bipolar devices, depends chiefly on carrier recombination time, device thickness, and turn-offdi/dt.