Effect of Ar post-oxidation annealing on oxide-4H-SiC interfaces studied by capacitance to voltage measurements and photoemission spectroscopy
Effect of Ar post-oxidation annealing on oxide-4H-SiC interfaces studied by capacitance to voltage measurements and photoemission spectroscopy
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DOI：
10.1116/1.1865153
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发表时间：
2005-02
期刊：
影响因子：
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通讯作者：
Y. Hijikata;H. Yaguchi;S. Yoshida;Y. Ishida;M. Yoshikawa
中科院分区：
文献类型：
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作者：
Y. Hijikata;H. Yaguchi;S. Yoshida;Y. Ishida;M. Yoshikawa
通过电容-栅偏置电压（C-V）测量和光电子能谱（PES）研究了Ar气氛中氧化后退火（Ar POA）对4 H-SiC-氧化物界面的影响。从C-V测量中发现，当Ar POA温度高于600 °C时，C-V曲线的漂移消失。另一方面，角度分辨X射线光电子能谱测量显示，当Ar POA温度超过500 °C时，在界面处观察到的含有Si 1+氧化态的中间层的厚度突然减小。在紫外光电子能谱中，在高于600 °C的温度下，O2 p峰被Ar POA改变，该温度是C-V曲线的偏移在C-V测量中消失的温度。这表明由Ar POA引起的O2 p键的变化是C-V特性中观察到的位移的起源。根据PES和C-V测量结果，提出了Ar POA引起界面结构变化的模型，并利用C-V测量和PES研究了Ar POA对4 H-SiC-氧化物界面的影响。从C-V测量中发现，当Ar POA温度高于600 °C时，C-V曲线的漂移消失。另一方面，角度分辨X射线光电子能谱测量显示，当Ar POA温度超过500 °C时，在界面处观察到的含有Si 1+氧化态的中间层的厚度突然减小。在紫外光电子能谱中，在高于600 °C的温度下，O2 p峰被Ar POA改变，该温度是C-V曲线的偏移在C-V测量中消失的温度。这表明，由Ar POA引起的O2 p键的变化是C-V特性中观察到的位移的起源。根据PES测量结果，提出了Ar POA引起界面结构变化的模型。
The effect of post-oxidation annealing in Ar atmosphere (Ar POA) on 4H-SiC–oxide interfaces has been studied by capacitance to gate-bias voltage (C–V) measurements and photoemission spectroscopy (PES). It was found from the C–V measurements that the shift of the C–V curve disappears when the Ar POA temperature is higher than 600 °C. On the other hand, angle-resolved x-ray photoelectron spectroscopy measurements revealed that the thickness of the intermediate layers containing Si1+ oxidation states observed at the interfaces decreases abruptly when the Ar POA temperature exceeds 500 °C. In ultraviolet photoelectron spectra, O2p peaks were changed by Ar POA at temperatures higher than 600 °C, which is the temperature where the shift of the C–V curve disappears in C–V measurements. This shows that the change in O2p bonding by Ar POA is the origin of the shift observed in C–V characteristics. A model of structural changes in the interfaces by Ar POA has been proposed based on the results of PES measurements and those of C–V measurements.The effect of post-oxidation annealing in Ar atmosphere (Ar POA) on 4H-SiC–oxide interfaces has been studied by capacitance to gate-bias voltage (C–V) measurements and photoemission spectroscopy (PES). It was found from the C–V measurements that the shift of the C–V curve disappears when the Ar POA temperature is higher than 600 °C. On the other hand, angle-resolved x-ray photoelectron spectroscopy measurements revealed that the thickness of the intermediate layers containing Si1+ oxidation states observed at the interfaces decreases abruptly when the Ar POA temperature exceeds 500 °C. In ultraviolet photoelectron spectra, O2p peaks were changed by Ar POA at temperatures higher than 600 °C, which is the temperature where the shift of the C–V curve disappears in C–V measurements. This shows that the change in O2p bonding by Ar POA is the origin of the shift observed in C–V characteristics. A model of structural changes in the interfaces by Ar POA has been proposed based on the results of PES measurements a...