Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
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DOI：
10.1063/1.4821858
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发表时间：
2013-09-16
影响因子：
4
通讯作者：
Yamakoshi, Shigenobu
中科院分区：
文献类型：
--
作者：
Higashiwaki, Masataka;Sasaki, Kohei;Yamakoshi, Shigenobu
在半绝缘β-Ga 2 O3（010）衬底上制备了单晶氧化镓（Ga 2 O3）金属氧化物半导体场效应晶体管。采用分子束外延技术生长了Sn掺杂的n-Ga_2 O_3沟道层。对源极和漏极区域进行Si离子注入掺杂以获得低电阻欧姆接触。通过原子层沉积形成的Al 2 O3栅介质膜钝化了器件表面，显著降低了栅漏。具有2 μ m的栅极长度的器件显示出有效的栅极调制的漏极电流与极低的关态漏极泄漏小于几个pA/mm，导致高漏极电流的开/关比超过十个数量级。三端关态击穿电压达到370 V。在高达250摄氏度的温度下，晶体管仍能稳定工作。(C)2013 AIP Publishing LLC.
Single-crystal gallium oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors were fabricated on a semi-insulating beta-Ga2O3 (010) substrate. A Sn-doped n-Ga2O3 channel layer was grown by molecular-beam epitaxy. Si-ion implantation doping was performed to source and drain electrode regions for obtaining low-resistance ohmic contacts. An Al2O3 gate dielectric film formed by atomic layer deposition passivated the device surface and significantly reduced gate leakage. The device with a gate length of 2 mu m showed effective gate modulation of the drain current with an extremely low off-state drain leakage of less than a few pA/mm, leading to a high drain current on/off ratio of over ten orders of magnitude. A three-terminal off-state breakdown voltage of 370V was achieved. Stable transistor operation was sustained at temperatures up to 250 degrees C. (C) 2013 AIP Publishing LLC.