Effects of low-energy N+-beam implantation on root growth in Arabidopsis seedlings
Effects of low-energy N+-beam implantation on root growth in Arabidopsis seedlings
复制标题
低能N束注入对拟南芥幼苗根系生长的影响
DOI：
10.1016/j.ecoenv.2015.10.003
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发表时间：
2016
影响因子：
6.8
通讯作者：
Jiao Zhen
中科院分区：
文献类型：
--
作者：
Zhang Liang;Qi Wencai;Xu Hangbo;Wang Lin;Jiao Zhen
离子注入对植物形态变化和生物反应的影响与注入剂量有关。以往的研究主要集中在离子束技术在基因突变中的应用。关于离子注入诱导植物生长抑制的机制，我们的知识仍然有限。本研究以拟南芥种子为材料，研究了低能N+束流注入对根系生长的影响。结果表明，大剂量低能N+束流的注入使根和根尖长度明显缩短。共聚焦图像分析表明，离子注入降低了根分生组织的细胞活力和细胞分裂活性。离子注入处理的根中超氧自由基（o2•-）生成速率和过氧化氢（h2o2）含量显著高于对照。对所选基因的转录表达分析显示，离子注入后，拟南芥根系中与活性氧（ROS）产生相关的RBOH基因显著上调。离子注入对抗氧化酶活性也有诱导作用。此外，活性氧清除明显提高了离子注入对细胞活力和细胞分裂的响应，减轻了注入幼苗对根系生长的抑制。我们的研究结果表明，离子注入诱导的ROS过量产生参与了低能离子束对拟南芥幼苗根分生组织细胞活力和细胞分裂的抑制作用。
The effects of ion implantation on the morphology changes and biological responses of plants are dependent on implantation doses. Previous studies mainly focus on the application of ion-beam technology in genetic mutation. Our knowledge regarding the mechanism underlying the plant growth inhibition induced by ion implantation remains limited. In this study, we explore the responses of root growth to low-energy N+-beam implantation using implanted Arabidopsis seeds. Our results showed that the root and root tip length were obviously reduced by implantation with large doses of low-energy N+ beam. The analysis of confocal images showed that ion implantation reduced the cell viability and cell division activity in root meristem. The production rate of superoxide radical (O 2•-) and contents of hydrogen peroxide (H 2 O 2) in roots under ion implantation were markedly higher than those of controls. Transcriptional expression analysis of selected genes revealed that Arabidopsis RBOH genes associated with reactive oxygen species (ROS) production were significantly up-regulated in roots in response to ion implantation. The activities of antioxidant enzymes were also induced by ion implantation. Moreover, ROS scavenging obviously enhanced cell viability and cell division in response to ion implantation and alleviated the root growth inhibition of the implanted seedlings. Our results suggest that the overproduction of ROS induced by ion implantation is involved in the inhibitory effect of low-energy ion beam on root growth by affecting the cell viability and cell division of root meristem in Arabidopsis seedlings.