Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers
Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers
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DOI：
10.1088/0022-3727/49/36/364006
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发表时间：
2016-09-14
影响因子：
3.4
通讯作者：
Botton, G. A.
中科院分区：
文献类型：
--
作者：
Mi, Z.;Zhao, S.;Botton, G. A.
我们详细报道了分子束外延生长和表征的Al（Ga）N纳米线异质结的Si和深紫外发光二极管和激光器的应用。纳米线在富氮条件下形成，而不使用任何金属催化剂。与传统的外延层相比，Mg掺杂剂掺入在几乎无应变和缺陷的Al（Ga）N纳米线结构中显著增强，从而导致有效的p型导电。所得的Al（Ga）N纳米线LED表现出优异的性能，包括对于在207 nm处工作的AlN纳米线LED类似于5.5V的开启电压。本文还介绍了一种工作在UV-B波段的电注入AlGaN纳米线激光器的设计、制造和性能。
We report on the detailed molecular beam epitaxial growth and characterization of Al(Ga)N nanowire heterostructures on Si and their applications for deep ultraviolet light emitting diodes and lasers. The nanowires are formed under nitrogen-rich conditions without using any metal catalyst. Compared to conventional epilayers, Mg-dopant incorporation is significantly enhanced in nearly strain-and defect-free Al(Ga) N nanowire structures, leading to efficient p-type conduction. The resulting Al(Ga) N nanowire LEDs exhibit excellent performance, including a turn-on voltage of similar to 5.5V for an AlN nanowire LED operating at 207 nm. The design, fabrication, and performance of an electrically injected AlGaN nanowire laser operating in the UV-B band is also presented.