Study of pulsed laser deposition of RuO2 and SrRuO3 thin films

Study of pulsed laser deposition of RuO2 and SrRuO3 thin films
复制标题

DOI:
10.1007/s003390051481
复制
发表时间:
1999-12-01
影响因子:
2.7
通讯作者:
Kobayashi, T
Kobayashi, T
中科院分区:
材料科学4区
文献类型:
--
作者:
Fang, X;Kobayashi, T

文献摘要

被引文献

相似文献

利用分幅条纹相机对RuO 2和SrRuO 3的脉冲激光烧蚀过程进行了研究。在激光与靶的相互作用过程中,汽化、相爆和沸腾是主要的作用过程。在粒子以麦克斯韦空间分布移动之前,还提出了碰撞和绝热膨胀。在O-2压力下,快原子和慢原子之间发生大量碰撞,导致速度交换。测量了RuO_2和SRO薄膜的结构和电学性质(电导率和功函数)。在低至350 ℃的生长温度下获得外延SRO生长。研究了以RuO_2或SRO薄膜为电极的铁电和高介电薄膜电容器。
In this study, the pulsed laser ablation of RuO2 and SrRuO3 (SRO) is investigated by observing the fluorescence from excited atoms in the plume by using a framing streak camera. Vaporization, phase explosion and boiling are suggested to play the main roles in the processes for the interaction between the laser beam and target. Collisions and adiabatic expansion are also suggested before particles move forward with shifted Maxwellian spatial distribution. In O-2 pressure, numerous collisions between fast and slow atoms occur and result in the exchange of speeds. The structural and electrical (conductivity and work-function) properties of RuO2 ana SRO thin films are measured. Epitaxial SRO growth was obtained at growth temperatures down to 350 degrees C. Ferroelectric and high- dielectric thin-him capacitors with RuO2 or SRO thin film electrode are also studied.