Metal-free plasma-enhanced chemical vapor deposition of large area nanocrystalline graphene
Metal-free plasma-enhanced chemical vapor deposition of large area nanocrystalline graphene
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DOI：
10.1088/2053-1591/1/2/025031
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发表时间：
2014-06-01
影响因子：
2.3
通讯作者：
Chong, Harold M. H.
中科院分区：
文献类型：
--
作者：
Schmidt, Marek E.;Xu, Cigang;Chong, Harold M. H.
This paper reports on large area, metal-free deposition of nanocrystalline graphene (NCG) directly onto wet thermally oxidized 150 mm silicon substrates using parallel-plate plasma-enhanced chemical vapor deposition. Thickness non-uniformities as low as 13% are achieved over the whole substrate. The cluster size L-a of the as-obtained films is determined from Raman spectra and lies between 1.74 and 2.67 nm. The film uniformity was further confirmed by Raman mapping. The sheet resistance R-sq of 3.73 k Omega and charge carrier mobility mu of 2.49 cm(2) V-1 s(-1) are measured. We show that the NCG films can be readily patterned by reactive ion etching. NCG is also successfully deposited onto quartz and sapphire substrates and showed > 85% optical transparency in the visible light spectrum.
