Simulation study of a novel AlGaN/GaN L‐FER with ultralow turn‐on voltage and low reverse leakage
Simulation study of a novel AlGaN/GaN L‐FER with ultralow turn‐on voltage and low reverse leakage
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DOI：
10.1049/mna2.12122
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发表时间：
2022-04
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影响因子：
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通讯作者：
Yijun Shi;Hongyue Wang;Bin Zhou;Yiqiang Chen;Yun Huang
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文献类型：
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作者：
Yijun Shi;Hongyue Wang;Bin Zhou;Yiqiang Chen;Yun Huang
在这项工作中，提出了一种具有超低导通电压（VT）和低反向漏电流（IR）的新型AlGaN/GaN横向场效应整流器（L-FER），并通过计算机辅助设计（TCAD）Sentaurus技术进行了验证。通过将短沟道金属氧化物半导体（MOS）结构与欧姆接触结构短暂接触作为所提出的L-FER的阳极，可以实现超低VT。通过在阴极侧 MOS 边缘附近插入浮动钳位 (FC) 电极，可以将 MOS 边缘的横向沟道电位钳位到一个较小的值。因此，可以抑制MOS结构中短沟道效应引起的高IR。与传统的短沟道 L-FER 相比，所提出的 FC-L-FER 的 IR 降低了大约四个数量级，而正向电流和 VT 没有明显的退化。此外，所提出的 FC-L-FER 还具有出色的反向恢复特性。
In this work, a novel AlGaN/GaN lateral field‐effect rectifier (L‐FER) with ultralow turn‐on voltage (VT) and low reverse leakage current (IR) is proposed and verified by technology computer aided design (TCAD) Sentaurus. Through shortly contacting the short‐channel metal–oxide–semiconductor (MOS) structure with an Ohmic‐contact structure as the anode of the proposed L‐FER, an ultralowVTcan be realized. And by inserting a floating clamp (FC) electrode near the cathode‐side MOS edge, the transverse channel potential at the MOS edge could be clamped to a small value. Thus, the highIRinduced by the short‐channel effect in the MOS structure could be suppressed. In contrast to the conventional short‐channel L‐FER, the proposed FC‐L‐FER exhibits about four orders of magnitude reduction inIR, without obvious degeneration in the forward current andVT. Moreover, the proposed FC‐L‐FER also delivers excellent reverse recovery characteristics.