Ni-doped AgGaS2 Photocatalyst for H2 Evolution utilizing Wide Visible Light
Ni-doped AgGaS2 Photocatalyst for H2 Evolution utilizing Wide Visible Light
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利用宽可见光析氢的 Ni 掺杂 AgGaS2 光催化剂
DOI：
10.1002/cssc.201500540
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
A. Kudo
中科院分区：
文献类型：
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作者：
K. Yamato;A. Iwase;A. Kudo
镍掺杂到AgGaS 2产生一个新的吸收带，在波长比本征吸收带的AgGaS 2主机。掺杂的镍在AgGaS 2的禁带中形成电子供体能级。具有铑助催化剂的镍掺杂的AgGaS 2在高达760 nm的光下显示出光催化活性，用于牺牲H2析出，这是由于从由Ni 2+组成的电子供体能级到AgGaS 2的导带的跃迁。 在540-620 nm范围内牺牲放氢的表观量子产率约为1%。 此外，镍掺杂的AgGa0.75In0.25S2也对近红外光有响应，最高可达900 nm。
Doping of nickel into AgGaS2yields a new absorption band, at a wavelength longer than the intrinsic absorption band of the AgGaS2host. The doped nickel forms an electron donor level in a forbidden band of AgGaS2. The nickel‐doped AgGaS2with rhodium co‐catalyst shows photocatalytic activity for sacrificial H2evolution under the light of up to 760 nm due to the transition from the electron donor level consisting of Ni2+to the conduction band of AgGaS2. Apparent quantum yields for the sacrificial H2evolution at 540–620 nm are about 1 %. Moreover, the nickel‐doped AgGa0.75In0.25S2also responds to near‐IR light, up to 900 nm.