Resonant nonlinear susceptibility near the GaAs band gap.
Resonant nonlinear susceptibility near the GaAs band gap.
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DOI：
10.1103/physrevlett.69.2303
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发表时间：
1992-10
影响因子：
8.6
通讯作者：
Zhang;Jin;Yang;Schowalter
中科院分区：
文献类型：
--
作者：
Zhang;Jin;Yang;Schowalter
我们报道了室温下半导体GaAs带隙附近亚皮秒光整流的新结果。我们区分辐射产生的真实的载体和产生的光学整流通过使用正常和偏离正常的入射光照明。在垂直入射光照射下，GaAs表面的非线性极化率的幅度变化很大（2个数量级），当光子能量被调谐到带隙以上时，极化率的符号反转
We report new results on subpicosecond optical rectification near the semiconductor GaAs band gap at room temperature. We discriminate between radiation produced by real carriers and that produced by optical rectification by using normal and off-normal incident optical illumination. Under normal incident optical illumination of the GaAs surface, the amplitude of the nonlinear susceptibility varies dramatically (2 orders of magnitude) and the sign of the susceptibility reverses when the photon energy is tuned above the band gap