Magnetoresistance and interlayer diffusion in PtMn spin valves upon postdeposition annealing
Magnetoresistance and interlayer diffusion in PtMn spin valves upon postdeposition annealing
复制标题
沉积后退火时 PtMn 自旋阀中的磁阻和层间扩散
DOI：
10.1063/1.1361260
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发表时间：
2001
影响因子：
3.2
通讯作者：
K.
中科院分区：
文献类型：
--
作者：
Y. K. Kim;S. Lee;S. Song;G. Park;Hyucksoo Yang;K.
我们报告退火时间对Ta/NiFe/CoFe/Cu/CoFe/PtMn/Ta自旋阀的微观结构演变和由此产生的磁输运性质的变化的影响，包括PtMn层厚度从10到30 nm。在270 °C下进行沉积后退火长达35小时。 发现具有20 nm PtMn和30 nm PtMn层的样品的阻断温度分别为350 °C和400 °C。 的磁阻和层间耦合场的变化变得很大，退火时间的增加，特别是对于样品具有相对较厚的PtMn层。微观结构变化和性能下降的主要原因是由于原子成分如Mn的层间扩散，最有可能通过晶界。在自由和钉扎CoFe层中的轻B掺杂（1原子%）被证明在阻挡扩散过程方面是有效的。
We report annealing time effects on the microstructural evolution and resultant magneto-transport property changes in Ta/NiFe/CoFe/Cu/CoFe/PtMn/Ta spin valves comprising PtMn layer thicknesses ranging from 10 to 30 nm. Postdeposition annealing was performed at 270 °C up to 35 h. The blocking temperatures of samples with 20 nm PtMn and 30 nm PtMn layers were found to be 350 °C and 400 °C, respectively. The magnetoresistance and interlayer coupling field changes became large as annealing time increased, in particular, for samples with relatively thicker PtMn layers. The main cause of microstructural changes and property degradation was due to interlayer diffusion of atomic constituents such as Mn, most likely through grain boundaries. Light B doping (1 at. %) in both free and pinned CoFe layers was proven effective in terms of blocking diffusion processes.