Electrical conductivity of Zn1−xCoxO ferromagnetic films at low temperatures
Electrical conductivity of Zn1−xCoxO ferromagnetic films at low temperatures
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Zn1−xCoxO 铁磁薄膜在低温下的电导率
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
O. V. Reukova
中科院分区：
文献类型：
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作者：
V. Kytin;V. A. Kul’bachinskiĭ;D. Glebov;L. Burova;A. Kaul;O. V. Reukova
报道了钴掺杂氧化锌薄膜的电导率和磁性能的实验结果。结果表明低温下希望传导机制和高温下能带机制占主导地位。钴浓度从 1.5 at% 增加到 6.3 at% 会导致薄膜电导率降低。由于钴浓度增加时薄膜结晶度的降低和部分电子态的局域化，跳跃传导对电导率的贡献增加。对于含钴薄膜，观察到磁矩随磁场变化的磁滞现象。磁化曲线形状对钴浓度的依赖性是不规则的。顺磁性对磁化率的贡献随着钴浓度的增加而增加。
The results of experiments on electrical conductivity and magnetic properties of thin cobalt-doped zinc oxide films are reported. The results indicate the predominance of the hoping conduction mechanism at low temperatures and the band mechanism at high temperatures. An increase in the cobalt concentration from 1.5 to 6.3 at % leads to the reduction of the electrical conductivity of the films. The contribution of hopping conduction to the conductivity increases due to a decrease in the crystallinity of the films and localization of a part of electron states upon an increase in the cobalt concentration. For cobalt-containing films, a hysteresis of the magnetic moment as a function of the magnetic field is observed. The dependence of the shape of the magnetization curves on the cobalt concentration is irregular. The paramagnetic contribution to the magnetic susceptibility increases with the cobalt concentration.