Solution-processed polycrystalline silicon on paper

Solution-processed polycrystalline silicon on paper
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DOI:
10.1063/1.4916998
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发表时间:
2015-04-20
影响因子:
4
通讯作者:
Ishihara, R.
Ishihara, R.
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Trifunovic, M.;Shimoda, T.;Ishihara, R.

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