Interface perpendicular magnetic anisotropy in Fe/MgAl¬2O4 layered structures
Interface perpendicular magnetic anisotropy in Fe/MgAl¬2O4 layered structures
复制标题
Fe/MgAl-2O4 层状结构中的界面垂直磁各向异性
DOI：
10.1002/pssr.201409340
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
H. Sukegawa and S. Mitani
中科院分区：
文献类型：
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作者：
J. W. Koo;H. Sukegawa and S. Mitani
最近报道的用于磁性隧道结（MTJ）的MgAl 2 O 4隧道势垒被认为是传统MgO势垒的替代品，因为MgAl 2 O 4基MTJ获得了大的隧道磁阻（TMR）比。在这项研究中，我们证明了Fe（001）/MgAl 2 O 4层状结构界面产生的大的垂直磁各向异性（PMA），这对于开发垂直磁化的MgAl 2 O 4基MTJ是有用的。对于外延生长的0.7 nm厚的Fe/MgAl 2 O 4（001），PMA能量密度达到0.4 MJ/m3。有趣的是，Fe/非外延生长的MgAl 2 O 4结构也获得了界面PMA，这表明MgAl 2 O 4层的晶体结构对获得的PMA没有关键影响。外延生长的Fe（0.7 nm）/MgAl 2 O 4层状结构中的大界面垂直磁各向异性（© 2014 WILEY-VCH Verlag GmbH &Co. KGaA，魏因海姆）
The recently reported MgAl2O4tunnel barrier for the magnetic tunnel junctions (MTJs) is considered to be an alternative to the conventional MgO barrier, since a large tunnel magnetoresistance (TMR) ratio was obtained for the MgAl2O4‐based MTJs. In this study, we demonstrated large perpendicular magnetic anisotropy (PMA) arising from the interfaces of Fe(001)/MgAl2O4layered structures, which can be useful for developing perpendicularly magnetized MgAl2O4‐based MTJs. A PMA energy density of 0.4 MJ/m3was achieved for an epitaxially grown 0.7 nm thick Fe/MgAl2O4(001). Interestingly, the interface PMA was also obtained for the Fe/non‐epitaxially grown MgAl2O4structures, which indicates that the crystallographic structure of MgAl2O4layer has no critical influence on the obtained PMA.Large interface perpendicular magnetic anisotropy in the epitaxially grown Fe (0.7 nm)/MgAl2O4layered structure(© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)