Observation of an environmentally insensitive solid-state spin defect in diamond
Observation of an environmentally insensitive solid-state spin defect in diamond
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DOI：
10.1126/science.aao0290
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发表时间：
2018-07-06
期刊：
影响因子：
56.9
通讯作者：
de Leon, Nathalie P.
中科院分区：
文献类型：
--
作者：
Rose, Brendon C.;Huang, Ding;de Leon, Nathalie P.
工程相干系统是量子科学的中心目标。钻石色心是一种很有前途的方法，有可能将原子的相干性与固态平台的可扩展性结合起来。我们报告了一种对声子和电场噪声引起的环境退相干不敏感的色心：硅空位（SiV0）的中性电荷态。通过仔细的材料工程，我们实现了 80% 以上的注入硅向 SiV0 的转化。 SiV0 的自旋晶格弛豫时间接近 1 分钟，相干时间接近 1 秒。它的光学特性非常有利，大约 90% 的发射进入零声子线，并且光学线宽接近变换极限。这些综合特性使 SiV0 成为量子网络应用的一个有前途的缺陷。
Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid-state platform. We report a color center that shows insensitivity to environmental decoherence caused by phonons and electric field noise: the neutral charge state of silicon vacancy (SiV0). Through careful materials engineering, we achieved >80% conversion of implanted silicon to SiV0. SiV0 exhibits spin-lattice relaxation times approaching 1 minute and coherence times approaching 1 second. Its optical properties are very favorable, with similar to 90% of its emission into the zero-phonon line and near-transform-limited optical linewidths. These combined properties make SiV0 a promising defect for quantum network applications.