Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures
Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures
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AlGaN/AlN/GaN/AlN 异质结构中的大零场自旋分裂
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
E. Ozbay
中科院分区：
文献类型：
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作者：
S. B. Lişesivdin;N. Balkan;O. Makarovsky;A. Patané;A. Yildiz;M. Caliskan;M. Kasap;S. Özçelik;E. Ozbay
本文描述了Al0.22Ga0.78N/AlN/GaN/AlN异质结中的Shubnikov-de Haas(SDH)测量。我们的实验结合对不同温度下的霍尔数据的分析证实了在AlN/GaN界面上形成了二维电子气(2DEG)。还观察到SDH振荡中的拍频模式，并将其归因于2DEG第一能带的零场自旋分裂。计算了有效自旋-轨道耦合参数和零场自旋分裂能，并与文献报道的结果进行了比较。我们发现零场自旋分裂能随片电子密度的增加而增加，并且我们的数值(12.75 meV)是文献中报道的GaN基异质结构中最大的。
This work describes Shubnikov–de Haas (SdH) measurements in Al0.22Ga0.78N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a two-dimensional electron gas (2DEG) at the AlN/GaN interface. A beating pattern in the SdH oscillations is also observed and attributed to a zero-field spin splitting of the 2DEG first energy subband. The values of the effective spin-orbit coupling parameter and zero-field spin-split energy are estimated and compared with those reported in the literature. We show that zero-field spin-split energy tends to increase with increasing sheet electron density and that our value (12.75 meV) is the largest one reported in the literature for GaN-based heterostructures.