Design and characterization of microfabricated piezoresistive floating element-based shear stress sensors
Design and characterization of microfabricated piezoresistive floating element-based shear stress sensors
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DOI：
10.1016/j.sna.2006.04.035
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发表时间：
2007-02-28
影响因子：
4.6
通讯作者：
Pruitt, Beth L.
中科院分区：
文献类型：
--
作者：
Barlian, A. Alvin;Park, Sung-Jin;Pruitt, Beth L.
本文介绍了用于水下剪应力直接测量的独特的压阻式微细加工剪应力传感器的设计、制造和特性。侧壁埋入式压敏电阻测量侧向力(综合剪应力)，而传统的顶部埋置压敏电阻测量法向力。除了斜注入技术外，制造工艺还包括氢退火步骤，以平滑深反应离子刻蚀(DRIE)工艺留下的扇形硅侧壁。这一步骤被发现可以将侧壁I-注入压敏电阻的1/f噪声水平降低近一个数量级。利用微结构硅悬臂式力传感器表征了横向灵敏度。通过激光多普勒测振法和平板单元的共振来评价离面灵敏度。测试了系统的面内灵敏度和面外串扰，以及测量的滞后性和重复性。用TSUPREM-4模拟研究了侧壁注入压敏电阻灵敏度的理论值和实验值之间的差异。这些传感器被设计用于水下水动力流动的研究。(C)2006爱思唯尔B.V.保留所有权利。
This paper presents the design, fabrication, and characterization of unique piezoresistive microfabricated shear stress sensors for direct measurements of shear stress underwater. Sidewall-implanted piezoresistors measure lateral force (integrated shear stress) and traditional top-implanted piezoresistors detect normal forces. In addition to the oblique-implant technique, the fabrication process includes a hydrogen anneal step to smooth scalloped silicon sidewalls left by the deep reactive ion etch (DRIE) process. This step was found to reduce the 1/f noise level by almost an order of magnitude for the sidewal I-implanted piezoresistors. Lateral sensitivity was characterized using a microfabricated silicon cantilever force sensor. Out-of-plane sensitivity was evaluated by laser Doppler vibrometry and resonance of the plate element. In-plane sensitivity and out-of-plane crosstalk were characterized, as well as hysteresis and repeatability of the measurements. TSUPREM-4 simulations were used to investigate the discrepancies between the theoretical and experimental values of sidewall-implanted piezoresistor sensitivity. The sensors are designed to be used underwater for studies of hydrodynamic flows. (c) 2006 Elsevier B.V. All rights reserved.