Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
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DOI：
10.1063/1.2990657
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发表时间：
2008-09-22
影响因子：
4
通讯作者：
Kim, Hye Dong
中科院分区：
文献类型：
--
作者：
Jeong, Jae Kyeong;Yang, Hui Won;Kim, Hye Dong
我们研究了钝化层对铟镓锌氧化物（IGZO）薄膜晶体管稳定性的影响。虽然没有任何钝化层的器件在正栅极电压应力下显示出巨大的阈值电压（V-th）偏移，但是适当钝化的器件没有表现出任何Vth偏移。电荷捕获模型，这一直被认为是一个合理的机制，本身不能解释这种行为。相反，Vth不稳定性归因于在栅极电压应力期间暴露的IGZO背表面与环境气氛中的氧和/或水之间的相互作用。(C)2008年美国物理研究所。
We investigated the impact of the passivation layer on the stability of indium-gallium-zinc oxide (IGZO) thin film transistors. While the device without any passivation layer showed a huge threshold voltage (V-th) shift under positive gate voltage stress, the suitably passivated device did not exhibit any Vth shift. The charge trapping model, which has been believed to be a plausible mechanism, cannot by itself explain this behavior. Instead, the Vth instability was attributed to the interaction between the exposed IGZO backsurface and oxygen and/or water in the ambient atmosphere during the gate voltage stress. (C) 2008 American Institute of Physics.