Impact of Irradiation Side on Neutron-Induced Single-Event Upsets in 65-nm Bulk SRAMs

Impact of Irradiation Side on Neutron-Induced Single-Event Upsets in 65-nm Bulk SRAMs
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辐照侧对 65 nm Bulk SRAM 中中子诱发的单粒子扰动的影响

DOI:
10.1109/tns.2019.2902176
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发表时间:
2019
影响因子:
1.8
通讯作者:
Y. Watanabe
Y. Watanabe
中科院分区:
工程技术3区
文献类型:
--
作者:
Shin;Wang Liao;S. Manabe;Tatsuhiko Sato;M. Hashimoto;Y. Watanabe

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通过中子辐照测量和模拟研究了辐照侧对中子诱发单粒子翻转截面的影响。用准单能中子辐照装有65 nm体6 T CMOS静态随机存取存储器的测试板,并对SEU的数量进行计数。通过基板侧照射得到的SEU数比通过塑料封装侧照射得到的SEU数少约20%~ 30%。我们还研究了辐照侧的软错误率(Sers)的影响,通过地面中子能谱通过蒙特卡罗模拟。从塑料封装侧照射获得的SER大约是从板侧照射获得的SER的两倍,这表明可以通过使器件的封装侧朝下来降低Sers。此外,基于模拟,放置在存储器芯片前面的材料的原子组成对SER具有相当大的影响,因为次级H和He离子(SEU的主要原因)的产生产率和角分布取决于组成。特别是,存在的塑料,如塑料,大大增加SER,因为较高的二次H离子的生产率,产生通过弹性散射的中子与氢原子。
The impact of the irradiation side on the cross sections of single-event upsets (SEUs) induced by neutrons was investigated by performing neutron irradiation measurements and simulations. A test board equipped with 65-nm bulk 6-T CMOS static random access memories was irradiated by quasi-monoenergetic neutrons, and the number of SEUs was counted. The number of SEUs obtained by the board-side irradiation was approximately 20% to 30% smaller than that obtained by irradiation on the plastic package side. We also investigated the impact of irradiation side on the soft error rates (SERs) obtained with by the terrestrial neutron energy spectrum via a Monte Carlo simulation. The SER obtained from the plastic package side irradiation was approximately twice that obtained for the board side irradiation, indicating that SERs can be reduced by equipping the device with the package side facing downward. Additionally, based on the simulation, the atomic composition of the material placed in front of the memory chip has a considerable influence on the SER because production yields and angular distributions of secondary H and He ions (the main causes of SEUs) depend on the composition. In particular, the existence of hydrides, such as plastic, considerably increases the SER because of the higher production yields of secondary H ions that are generated via elastic scattering of neutrons with hydrogen atoms.
DOI: --
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期刊: Nuclear Technology
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