SiC MOSFETs connected in series with active voltage control
SiC MOSFETs connected in series with active voltage control
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带主动电压控制的串联 SiC MOSFET
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
Xueqiang Zhang
中科院分区：
文献类型：
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作者：
P. Palmer;Jin Zhang;Xueqiang Zhang
碳化硅（SiC）MOSFET提供快速开关和低导通电压。串联SiC MOSFET将实现高压高频应用。尽管如此，SiC MOSFET的输出电容通常会与串联器件电路中不可避免的显著杂散电感一起振铃。本文采用有源电压控制栅极驱动方法对MOSFET电压进行箝位，以确保较低且稳定的过冲电压、良好的电压平衡和接近理想的导通。结论是，SiC MOSFET和SiC二极管可以串联连接，与硅（Si）IGBT和Si二极管技术相比具有显著的优势，并且可以通过使用有源电压控制来实现这些优势。
Silicon Carbide (SiC) MOSFETs offer rapid switching and low on-state voltages. Connecting SiC MOSFETs in series will enable high voltage high frequency applications. Nonetheless, the output capacitances of SiC MOSFETs are often found to ring with the significant stray inductance inevitably found in circuits with series connected devices. The active voltage control gate drive method is used here to clamp the MOSFET voltages to ensure low and stable overshoot voltages, good voltage balancement and a near ideal turn on. It is concluded that SiC MOSFETs and SiC diodes may be connected in series with significant advantages compared to Silicon (Si) IGBTs and Si diode technologies, and the benefits may be realized with the use of active voltage control.