Assessing local voltage in CIGS solar cells by nanoscale resolved Kelvin Probe Force Microscopy and sub-micron photoluminescence
Assessing local voltage in CIGS solar cells by nanoscale resolved Kelvin Probe Force Microscopy and sub-micron photoluminescence
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通过纳米级分辨开尔文探针力显微镜和亚微米光致发光评估 CIGS 太阳能电池的局部电压
DOI：
10.1109/pvsc.2014.6925014
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
M. Leite
中科院分区：
文献类型：
--
作者：
E. Tennyson;J. Garrett;Chen Gong;J. Frantz;J. Myers;R. Bekele;J. Sanghera;J. Munday;M. Leite
在这里，我们使用纳米级分辨开尔文探针力显微镜(KPFM)来局部探测CIGS薄膜太阳能电池的开路电压。依赖于光照的KPFM表明，由于开路电压的局部变化，晶界和晶核在表面光电压中呈现变化。此外，还使用了室温亚微米光致发光(PL)扫描来描绘多晶CIGS薄膜中的复合中心。
Here we use nanoscale resolved Kelvin Probe Force Microscopy (KPFM) to locally probe the open circuit voltage in CIGS thin film solar cells. Illumination-dependent KPFM shows that the grain boundaries and grain cores present variations in surface photovoltage, as a consequence of the local variation of the open circuit voltage. Additionally, room temperature sub-micron photoluminescence (PL) scans were used to map the recombination centers in the polycrystalline CIGS films.