Performance of the Silicon-On-Insulator Pixel Sensor for X-ray Astronomy, XRPIX6E, Equipped with Pinned Depleted Diode Structure
Performance of the Silicon-On-Insulator Pixel Sensor for X-ray Astronomy, XRPIX6E, Equipped with Pinned Depleted Diode Structure
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用于 X 射线天文学的绝缘体上硅像素传感器 XRPIX6E 的性能，配备钉扎耗尽二极管结构
DOI：
10.1016/j.nima.2018.09.127
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Y. Nishioka & 16 coauthors
中科院分区：
文献类型：
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作者：
S. Harada;T. G. Tsuru;T. Tanaka;H. Uchida;H. Matsumura;K. Tachibana;H. Hayashi;A. Takeda;K. Mori;Y. Nishioka & 16 coauthors
我们一直在为下一代 X 射线天文卫星开发事件驱动的 X 射线绝缘体硅 (SOI) 像素传感器，称为“XRPIX”。 XRPIX 是一款单片有源像素传感器，采用 SOI CMOS 技术制造，并配备所谓的“事件驱动读出”功能，允许使用每个像素中实现的触发电路仅读出命中像素。当前版本的 XRPIX 在事件驱动读出模式下的光谱性能低于帧读出模式，这是由于传感器层和电路层之间的干扰造成的。干扰也会降低增益。为了抑制干扰，我们开发了一种配备Pinned耗尽二极管结构的新器件“XRPIX6E”。在掩埋氧化物层和传感器层之间的界面处形成足够高掺杂的掩埋p阱，并充当屏蔽层。与以前的设备相比，XRPIX6E 在事件驱动读出模式和帧读出模式下都表现出改进的光谱性能。在帧驱动和事件驱动读出模式下，6.4 keV 处半峰全宽的能量分辨率分别为 236 ± 1 eV 和 335 ± 4 eV。两种模式下的读出噪声和光谱性能之间存在差异，这表明某些机制仍然会降低事件驱动读出模式的性能。
We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called “XRPIX”, for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology, and is equipped with the so-called “Event-Driven readout”, which allows reading out only hit pixels by using the trigger circuit implemented in each pixel. The current version of XRPIX has lower spectral performance in the Event-Driven readout mode than in the Frame readout mode, which is due to the interference between the sensor layer and the circuit layer. The interference also lowers the gain. In order to suppress the interference, we developed a new device, “XRPIX6E” equipped with the Pinned Depleted Diode structure. A sufficiently highly-doped buried p-well is formed at the interface between the buried oxide layer and the sensor layer, and acts as a shield layer. XRPIX6E exhibits improved spectral performances both in the Event-Driven readout mode and in the Frame readout mode in comparison to previous devices. The energy resolutions in full width at half maximum at 6.4 keV are 236 ± 1 eV and 335 ± 4 eV in the Frame and Event-Driven readout modes, respectively. There are differences between the readout noise and the spectral performance in the two modes, which suggests that some mechanism still degrades the performance in the Event-Driven readout mode.