Giant plasmon instability in a dual-grating-gate graphene field-effect transistor
Giant plasmon instability in a dual-grating-gate graphene field-effect transistor
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双光栅栅石墨烯场效应晶体管中的巨大等离子体激元不稳定性
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
A. Satou
中科院分区：
文献类型：
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作者：
Y. Koseki;V. Ryzhii;T. Otsuji;V. Popov;A. Satou
利用玻尔兹曼方程的自洽模拟方法，研究了直流电流注入引起的双栅栅场效应晶体管中等离子体激元的不稳定性。在声学声子限制的电子散射条件下，等离子体激元不稳定性的总增长率在室温下可超过4×10~(-1)×10~(-1)×10~(-1)×10~(-1)×10~(-1)×10~(-1)×10~(-6)×10~(-1)×10~(-1)×10~(-1)×10~(-3)×10~(-6)×10~(-1)×10~(-1)×10~(-1)×10~(-1)×10~(-1)×10~(-1)×10~(-3)×10~(-1)×10~(-1)×10~(-3)×10~(-3)×10~(-6)×10~(-1通过将模拟结果与现有理论进行比较，揭示了巨型总增长率源于同时发生的所谓的Dyakonov-Shur不稳定性和Ryzhii-Satou-Shur不稳定性。
We study instability of plasmons in a dual-grating-gate graphene field-effect transistor induced by dc current injection using self-consistent simulations with the Boltzmann equation. With only the acoustic-phonon-limited electron scattering, it is demonstrated that a total growth rate of the plasmon instability, with the terahertz/mid-infrared range of the frequency, can exceed $4 imes10^{12}$ s$^{-1}$ at room temperature, which is an order of magnitude larger than in two-dimensional electron gases based on usual semiconductors. By Comparing the simulation results with existing theory, it is revealed that the giant total growth rate originates from simulataneous occurence of the so-called Dyakonov-Shur and Ryzhii-Satou-Shur instabilities.