Synergistic Effects of Ionizing Dose and Displacement Damage on SiGe Heterojunction Bipolar Transistors
Synergistic Effects of Ionizing Dose and Displacement Damage on SiGe Heterojunction Bipolar Transistors
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DOI：
10.1109/tns.2022.3155639
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发表时间：
2022-05-01
影响因子：
1.8
通讯作者：
Wei, Jianan
中科院分区：
文献类型：
--
作者：
Li, Pei;He, Chaohui;Wei, Jianan
采用γ射线和中子单独和混合辐照实验，研究了SiGe异质结双极晶体管（HBT）电离剂量和位移损伤的辐照协同效应。这些结果表明，在这项工作中的SiGe HBT经历了一个显着的ISEs的敏感性和基区电流的退化引起的混合照射比简单的人工总和的单独照射更严重。混合辐射引起的SiGe HBT的退化与V-BE的变化不是线性关系，但在低注入时退化显著，而在高注入时退化减弱。
The individual and mixed radiation experiments of gamma rays and neutrons were performed to evaluate the irradiation synergistic effects (ISEs) of ionizing dose and displacement damage on SiGe heterojunction bipolar transistors (HBTs). These results indicate that the SiGe HBTs in this work experience a significant sensitivity of ISEs and the degradation of base current induced by mixed irradiation was more severe than that of simple artificial sum of individual irradiation. The degradation of SiGe HBTs induced by mixed radiation does not vary with V-BE linearly, but is significant at low injection and weakened at high injection.