Growth and scintillation properties of Eu doped LiSrI 3 /LiI eutectics
Growth and scintillation properties of Eu doped LiSrI 3 /LiI eutectics
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Eu掺杂LiSrI 3 /LiI共晶的生长和闪烁特性
DOI：
10.1016/j.optmat.2017.05.010
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发表时间：
2017
影响因子：
3.9
通讯作者：
Yoshikawa Akira
中科院分区：
文献类型：
--
作者：
Kamada Kei;Chiba Hiroyuki;Yoshino Masao;Yamaji Akihiro;Shoji Yasuhiro;Kurosawa Shunsuke;Yokota Yuui;Ohashi Yuji;Yoshikawa Akira
采用坩埚下降法在内径为4 mm的石英样品中生长了Eu掺杂的LiSrI 3/LiI共晶。研究了它们的定向凝固共晶系。生长速率为0.3 mm/min。共晶显示出良好排列的共晶结构和光学透明。生长的Eu掺杂LiSrI 3/LiI共晶在X射线激发下显示出400 nm的发射，归因于Eu 2 +4f-5d跃迁。662 keV伽马射线的光输出约为26，000光子/MeV，5.5 MeV α射线的光输出约为35，000光子/MeV。
Eu doped LiSrI3/LiI eutectics were grown by the Bridgman method in a quartz ample with 4 mm inner diameter. and their directionally solidified eutectic system has been investigated. Growth rate was 0.3 mm/min. The eutectic showed well aligned eutectic structure and optically transparent. Grown Eu doped LiSrI3/LiI eutectic shows 400 nm emission ascribed to Eu2+4f-5d transition under X-ray excitation. The light yield was around 26,000 photon/MeV for 662 keV gamma-ray and 35,000 photons for 5.5 MeV alpha-ray.